Abstract
An original optical system for measuring substrate curvature (OSMSC) is described. The system enables a high-precision analysis of the processes of generation and relaxation of elastic stresses in growth of heterostructures (HSs) based on nitride compounds III-N by plasma-assisted molecular-beam epitaxy (PA-MBE). The application of OSMSC to analyze the growth of GaN/AlN/Si(111) HSs made it possible not only to observe in detail the variation dynamics of elastic stresses in this structure in its metal-enriched growth by low-temperature PA-MBE, but also to develop an HS design eliminating the effect of layer cracking by controlling the compressive stresses.
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