Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

Abstract

Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method.