Monatomic 2D phase-change memory for precise neuromorphic computing

Abstract

Phase-change random-access memory (PCRAM) is the leading candidate to overcome the intrinsic bottleneck in current von Neumann architecture by unifying computing with storage, enabling its prospect as cognitive memory. However, strong resistance drift in current Ge2Sb2Te5-based PCRAM devices obstructs the accomplishment of high-accuracy computing tasks that require stable multi-state programming. Moreover, the implementation of synaptic depression still remains highly challenging for current PCRAM devices due to the abrupt amorphization nature. We employed 4 nm-thick monatomic antimony (Sb) film to achieve reliable iterative RESET and cumulative SET operations simultaneously, with considerably lowered resistance drift and programming noise. The 2D Sb-based device is also capable of performing progressive RESET operations. Our work thus demonstrates the potential of monatomic 2D PCRAM for the future development of high-performance neuromorphic computing chips.