Abstract
Reflective Fourier Ptychographic Microscopy (FPM) has demonstrated the potential as a technology for semiconductor metrology and inspection applications, offering both a wide field-of-view (FOV) and high resolution with nanoscale height reconstruction accuracy. However, to enhance resolution, the wavelength of the illumination source has been shortened to the ultraviolet (UV) range, leading to a significant decrease in height calculation accuracy due to low signal-to-noise issues. Additionally, the time-consuming aspect persists as a challenge. To address these issues, we introduce Momentum Fourier Ptychographic Topography (MFPT). MFPT can overcome the problem of getting trapped in local minima due to noise, and it does not require an iterative process of total variant regularization, allowing for significant computational time savings. Using UV illumination with MFPT, we measure a United States Air Force (USAF) 1951 target and two step-height samples, providing evidence that MFPT is robust to noise and accurately reconstructs nanoscale height. As a result, utilizing UV illumination with MFPT allows us to achieve a resolution of 173 nm, and we can rapidly and accurately calculate the height of step-height samples with nominal heights of 30 nm and 70 nm.
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