Abstract
A series of recent experimental results show that carbon is a more suitable acceptor for GaAs than beryllium. One reason for this is the capability of ultra-high doping up to 1×10 21 cm −3 with carbon. However, the lattice constant significantly decreases with increasing hole concentration at such high doping levels. To solve the lattice-mismatch problem at the interface between heavily carbon-doped Gaas and moderately-doped or SI GaAs, we have grown heavily carbon-doped InGaAs lattice-matched to SI GaAs by metalorganic molecular beam epitaxy (MOMBE). Hall and X-ray diffraction measurements were performed to study the carrier concentrations and the lattice constants, respectively, of the heavily carbon-doped InGaAs with various In contents both before and after annealing.
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