Abstract

Thin films of vanadium dioxide (VO 2) on glass substrates were produced by the aqueous sol–gel method. Various levels of doping were achieved by adding small quantities of a water-soluble molybdenum compound to the sol. After dip coating, the substrates were reduced by heat treatment in a low-pressure carbon monoxide/carbon dioxide (CO/CO 2) atmosphere. The change in electrical conductivity with temperature, and optical reflectance in the semiconductor and metallic phases were measured and compared to undoped VO 2 films. Doping the VO 2 films with molybdenum lowered the transition temperature of the semiconductor-to-metal phase change; at a doping level of 7 at.% the transition temperature was measured at 24 °C, as indicated by the electrical conductivity. All the films showed a substantial change in reflectance upon heating through the transition. The optical reflectance in the semiconductor state increased slightly with additional dopant, while the reflectance in the metallic state remained constant.

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