Molybdenum doped indium oxide thin films grown on mica substrates with high near-infrared transparency and electron mobility for flexible optoelectronic and spintronic applications

Abstract

In the era of the artificial intelligence, flexible multifunctional films that combine optical transparency, electrical conductivity, and ferromagnetism are highly beneficial for many advanced applications. Herein, we fabricated a flexible magnetic transparent conductor molybdenum doped indium oxide (IMoO) thin film on a mica substrate using a pulsed laser deposition (PLD) technique. The valence states of Mo dopants were determined to be Mo4+ and Mo6+ by X-ray photoelectron spectroscopy (XPS) analysis. From the measured optical transmittance spectrum, average visible (Vis) and near-infrared (NIR) transmittance (Tave_Vis and Tave_NIR) values in IMoO film are calculated to be 85.9 % and 85.4 %, respectively. The IMoO film shows an electron mobility (μe) of around 113 cm2 V−1 s−1 and a sheet resistance (Rs) of 69 Ω. We illustrate the benefits of Mo doping, which leads to increased NIR transparency and μe compared to commercially available tin-doped indium oxide (ITO). On the other hand, the IMoO film shows clear magnetic hysteretic behaviors at room temperature, indicating the presence of ferromagnetism. The main origin of the ferromagnetism is presumably attributed to the Mo4+ ions with an electronic configuration of 4 d2. Bending cyclic tests reveal favourable mechanical durability and bending stability in the IMoO/mica films. Our systematic investigation demonstrates that IMoO film possesses a superior optoelectronic performance beyond ITO, Mn-doped indium oxide (IMnO), and Sn-Mn-codoped indium oxide (ITMnO), substantiating the potential of the IMoO/mica film as a high-performance transparent conductive magnetic material for flexible optoelectronic and spintronic applications.