Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

Abstract

The development of emerging high-temperature-resistant semiconductor materials is of great significance for the stability of signals and the reliability of sensors during extreme probing processes such as deep earth and space. However, current reports only focused on the properties of the semiconductor materials, neglecting the high-temperature-resistant properties of subsidiary components, such as substrate. In this study, for the first time, the feasibility of the Molybdenum-14Rhenium (Mo-14Re) alloy as a high-temperature semiconductor substrate material was verified at five temperature points (25 ℃ (room temperature, Rt.), 100 ℃, 200 ℃, 300 ℃, and 400 ℃, respectively). The results showed that the hardness (2.8 GPa to 2.4 GPa) of the Mo-14Re alloy changed slightly during the temperature up to 400 ℃; the Mo-14Re alloy generated protective Mo6+ and Re3+ oxides at different temperatures, which enhanced its oxidation resistance; the thermal expansion coefficient of the Mo-14Re alloy was 5.04 × 10−6/℃ at 400 ℃, which can be perfectly adapted to semiconductor components, such as silicon, silicon nitride, and gallium nitride. Simultaneously, the Mo-14Re alloy combined appropriate thermal conductivity, making it the most promising candidate for a new generation of high-temperature semiconductor substrate materials. This study can promote the application of semiconductor materials in extreme environments, such as high temperatures. Concurrently, this study can promote the development of deep earth exploration and aerospace fields and guide the selection of emerging high-temperature resistant substrate materials.