Abstract
Terahertz electromodulation spectroscopy provides insight into the physics of charge carrier transport in molecular semiconductors. The work focuses on thin-film devices of dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene. Frequency-resolved data show a Drude-like response of the hole gas in the accumulation region. The temperature dependence of the mobilities follows a T1/2 power law. This indicates that the thermal mean free path of the charge carriers is restricted by disorder. Only a fraction of approximately 5% of the injected carriers fulfills the Ioffe–Regel criterion and participates in band transport.
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