Abstract
This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method. The dynamics of charge transport are determined and used to clarify a transport mechanism. The 1,4,5,8-naphthalene-tetracarboxylic diphenylimide (NTCDI) SAM devices provide a useful tool to study the fundamentals of polaronic transport at organic surfaces and to discuss the performance of organic photovoltaic devices in nanoscale. Time-resolved photovoltaic studies allow us to separate the charge annihilation kinetics in the conductive NTCDI channel from the overall charge kinetic in a SAM-OFET device. It has been demonstrated that tuning of the type of conductivity in NTCDI SAM-OFET devices is possible by changing Si substrate doping. Our study of the polaron charge transfer in organic materials proposes that a cation-radical exchange (redox) mechanism is the major transport mechanism in the studied SAM-PVC devices. The role and contribution of the transport through delocalized states of redox active surface molecular aggregates of NTCDI are exposed and investigated. This example of technological development is used to highlight the significance of future technological development of nanotechnologies and to appreciate a structure-property paradigm in organic nanostructures.
Highlights
This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method
We present a brief overview of the experimental results obtained with naphthalene-tetracarboxylic diphenylimide (NTCDI) SAM photovoltaic devises (SAM-PVC) over the last years
This review highlights various problems and challenges that we are facing during development of nanoscale molecular photovoltaic devices
Summary
Solution-processed n-type organic thin-film transistors with high field-effect mobility. Letizia, J.A.; Facchetti, A.C.; Stem, L.; Ratner, M.A.; Marks, T.J. High Electron Mobility in Solution-Cast and Vapor-Deposited Phenacyl-Quaterthiophene Based Field-Effect Transistors: Toward N-Type Polythiophenes. Air Stable n-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides. Air-stable n-channel Organic Semiconductors Base on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups. Chesterfield, R.J.; McKeen, J.C.; Newman, C.R.; Ewbank, P.C.; Da Silva Filho, D.A.; Brédas, J.L.; Miller, L.L.; Mann, K.R.; Frisbie, C.D. Organic Thin Film Transistors Based on N-Alkyl Perylene Diimides: Charge Transport Kinetics as a Function of Gate Voltage and Temperature. Organic light emitted diodes (OLED’s) and first OFET were fabricated and tested in 1998–2000 It was realized even at very early stage of this project that in-plane order in VP-SAM structures is extremely interesting. The full complexity of transport phenomena in VP-SAM structures was not appreciated at that time
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