Abstract
We report studies of chemical reactions on single crystalline Si surfaces induced by oriented molecular beams. We discuss the obtained steric effects on Si from the viewpoint of the strength of the gas-surface interaction, in comparison with the steric effects appearing on the graphite surface. Oriented molecular beams demonstrate the possibility for controlling surface chemical reactions by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of material fabrication on Si surfaces.
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