Abstract

The bulk vacancy formation energies (Ev) were calculated for Al, Ni, Cu, Pd, Ag, and Pt single crystals with a molecular dynamics simulation that made use of the Sutton–Chen many-body potential. The vacancy formation energies for single crystals with the surface orientations of (111), (100) and (110) were calculated at temperatures ranging from 0K to 1000K or to below the melting temperatures of some of the elements. This study aims to investigate temperature and surface orientation dependence of the vacancy formation energy in bulk FCC crystals. Disordering occurred in (111) and (100) surface orientations at high temperatures, but well below the melting points of Al, Cu, Ag and Ni.

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