Abstract
The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.
Highlights
Ion implantation has been widely used in the semiconductor industry as an effective doping tool in the past decade [1]
In contrast with previous monomer ion implantation models [16], we studied vacancy generation and migration based on a cluster model by using molecular dynamics (MD) simulations in this work
Incident Si35 cluster ions were implanted into a monocrystalline silicon target, with each ion
Summary
Ion implantation has been widely used in the semiconductor industry as an effective doping tool in the past decade [1]. In most cases of ion implantation, the mobile defects ballistically generate and interact with each other via a collision cascade. This process is called dynamic annealing, and involves point defect recombination and clustering. Coatings 2020, 10, 146 to the complexity of the collision cascade—our understanding of dynamic annealing remains limited, even for crystal silicon, which is arguably the simplest and most extensively studied material [2,3,4]. Numerous previous studies on material doping and modification by using experimental methods and model simulations have shown that the collision cascade in damage generation is one of the most complex processes of defect physics [5,6,7,8,9]. Using a pulsed ion beam and fractal theory, Wallace et al
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