Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition

Abstract

Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulations in the context of plasma sputtering deposition: ZrxCu1−x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict the evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated x-ray diffraction patterns are compared.