Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films

Abstract

A series of molecular dynamics (MD) simulations have been conducted to investigate the heat transport in terms of the phonon dynamics in nanoscale silicon (Si). This work is motivated by a concern over the stagnation of heat at the drain region of nanoscopic transistors, owing to this, a large amount of optical phonons with a low group velocity are emitted from hot electrons, which are ballistically transferred through channel region. The point of this work is the explicit inclusion of the SiO2 film in the MD simulation of the Si lattice. The calculation results show that longitudinal optical (LO) phonons decay faster as Si lattice thickness decreases and turn into acoustic phonons. In contrast, thermal diffusion rate decreases with Si lattice thickness. Both the decay rate of LO phonons and thermal diffusion rate are not governed by oxide thickness. These results imply that the phonon scattering at the SiO2/Si interface is enhanced by thinning the Si layer. In nanoscopic devices, a thin Si layer is effective in diminishing the optical phonons with a low group velocity, but it hinders the subsequent heat transport.