Molecular dynamics simulation of self-sputtering of plasma facing material, Be

Abstract

Sputtering phenomenon can be evaluated by the molecular dynamics simulation approach as well as the experimental approach. Authors developed the evaluation system of sputtering using molecular dynamics and investigated the feasibility of this approach. This approach was applied to self-sputtering of beryllium because a selection of interatomic potential was comparatively easy. The energy of incident particles ranged from 30 to 300 electron-volts (eV). The incident angle was changed from 0 to 75 degrees normal to the surface of beryllium target. The sputtering yield and damage due to an incident particle was calculated using this approach. The results were compared with ones from references. The subjects was described when this approach was applied to the sputtering rate of plasma facing material.