Abstract
The molecular dynamics (MD) method, with David Cai’s electronic stopping power model applied, is successfully applied to simulate implantation into HfO2. For the first time, a reliable fitting value of the single electron radius in the electronic stopping power model is given for boron, arsenic and phosphorus implantation into HfO2. Excellent agreement between simulation results and SIMS data has been obtained over the energy range of 3–40keV using the derived fitting value. Our simulation results are found to be in better agreement with the SIMS data than those obtained by means of the traditional simulator TSUPREM4.
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