Abstract
Much attention has been paid to graphene growth by the surface decomposition of SiC. A SiC substrate surface contains a Si-terminated (0001) face and a C-terminated face. It was reported that graphene layers on these two faces have different structures and electronic properties. We studied the effects of the SiC substrate surface, i.e., of the Si-face and C-face, and annealing temperature on graphene growth using classical molecular dynamics (MD) simulation. It was found that quality of graphene on the Si-face was better than that on the C-face. In addition, graphene coverage was high at a high annealing temperature.
Published Version
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