Abstract

By using molecular dynamics simulations, we have studied the thermal rectification in double-layered Graphene-carbon nanotube (DGN-DWCNT) junctions. It is found that DGN-DWCNT junctions exhibit significant thermal rectification under both large and small thermal bias. Even under a small thermal bias |Δ| = 0.1, a rectification ratio as high as 300.6% can be achieved. The influences of the geometric parameters on the thermal rectification of the DGN-DWCNT junctions are discussed, and the underlying mechanism of the significant thermal rectification is explored. These results open a door in the applicability of DGN-DWCNT junctions and their based pillared graphene system in nanoscale engineering of thermal transport devices.

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