Molecular dynamics analysis of the influence of ion implantation parameters on ultra-precision machining of silicon carbide

Abstract

This paper aims to study the mechanism of ion implantation. Molecular dynamics software was used to simulate the process of 3C-SiC workpiece being ion implanted with different implant parameters. The influence of ion implantation parameters on workpiece damage, as well as on workpiece temperature, potential energy, dislocation defects, surface morphology, cutting force, stress and other processing parameters, is analyzed. The results show that with the increase of dose, the damage range inside the workpiece shows a periodic change, the potential energy and temperature generally show a rising trend, and the internal normal stress exhibits an increasing trend. In addition, the temperature, potential energy, cutting force and stress of the workpiece increase with the increasing inclination angle. Furthermore, the channel effect is obvious when the inclination angle of ion implantation is between 30° and 50°. Alternatively, for inclination angle greater than 70°, a scattering effect is distinctly observed. Moreover, the average cutting force decreases with the increase of injection distance. Lastly, the average temperature is lowest when the ion implantation region is in the middle of the workpiece, and the farther the implantation region is, the faster is the rise in temperature and potential energy.