Abstract

Molecular dynamic simulation of nano imprint lithography (NIL) in which nanoscale patterned stamp is pressed onto amorphous polyethylene (PE) surface is performed to study the deformation behavior of polymer resist. Force fields including bond, angle, torsion, and Lennard Jones potential are used to describe the inter-molecular and intra-molecular forces of PE molecules and stamp. Periodic boundary condition is used in horizontal direction and canonical NVT ensemble is employed to control the system temperature. Using the simulation results, the behavior of polymer resist is investigated during the imprinting process. The mechanism of resist deformation is analyzed by considering various parameters including the surface geometry, atom distribution, and density. Especially, the density in the bottom (emboss) region is found to be larger than the top (cavity) region due to compression of polymer molecules. The result indicates that small scale patterning of polymer resist largely depends on compression rather than the flow of molecules. The numerical results are compared with the local density measurement data using the atomic force microscope (AFM). They exhibit a similar behavior at least in a qualitative sense. Additional simulations, where the stamp geometry and molecular mobility are varied and are performed to investigate the deformation characteristics of polymer resist. From these simulations, important elements for understanding of NIL process are obtained.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.