Abstract
In the present study, using the molecular dynamics method, we investigated the impact interaction of a spherical cluster of 3C-SiC silicon carbide with a rigid wall at a wide range of velocities. The influence of cluster initial temperature on the fracture process was analyzed.
Highlights
Silicon carbide is a promising and interesting material due to its excellent chemical and physical stability, low density, high strength, and high thermal conductivity
We considered a spherical cluster of silicon carbide with a zinc blende structure (3C-SiC ) that impacted a rigid wall at different velocities
A further increasing of the initial cluster temperature led to the disappearance of the peak in the dependence of irreversible increment of potential energy from the impact velocity (T=1007 K)
Summary
Silicon carbide is a promising and interesting material due to its excellent chemical and physical stability, low density, high strength, and high thermal conductivity. It is widely used in the manufacture of various friction mechanisms and optoelectronic devices, gas turbines and armor protection materials. Many issues related to the production and processing of silicon carbide have not been well studied. Under the influence of intense external loads various phase transformations can occur in silicon carbide [3]. These phenomena should be taken into account in the numerical simulations of practical problems
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