Molecular Challenges of Immersion and Extreme Ultraviolet (EUV) Resists

Abstract

This paper outlines the major challenges for the development of 193 nm immersion and extreme ultraviolet (EUV) resists. The major issues for the implementation of 193 nm immersion are developing high index immersion fluids and high index lens materials to enable 32 nm half-pitch imaging. For EUV resists, reaction mechanisms are not well understood. In addition, the many constraints placed on EUV resists, such as needing low photospeed, low line width roughness, and low outgassing while achieving the desired resolution, make resist design very difficult.