Abstract
Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.
Highlights
Deshun Hong,1 Changjiang Liu,1 Haw-Wen Hsiao,2 Dafei Jin,3 John E
Topological properties of a material can be mapped to the particular symmetry observed in a class of material systems
Most works related to topological semimetals have been focused on bulk crystals, which hinder the tunability of these topological properties, as well as applications in devices
Summary
Deshun Hong,1 Changjiang Liu,1 Haw-Wen Hsiao,2 Dafei Jin,3 John E. The Fe3Sn layers are Kagome structured with Fe atoms forming corner sharing triangles with Sn atoms sitting in the center of Fe hexagons.
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