Abstract
Tin–telluride (SnTe) thin films were grown on (001)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 °C and 240 °C. The crystallinity of the SnTe thin films was studied using X-ray diffraction θ–2θ measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (111)-oriented domain was confirmed when the substrate temperature was 240 °C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
