Abstract
The incorporation of Nd3+ in CaF2 layers grown on Si and GaAs substrates by molecular beam epitaxy is studied by photoluminescence spectroscopy. The results are in qualitative agreement with those obtained on CaF2:Nd homoepitaxial layers. A lower emission intensity (∼70%) at λ=1.0475 μm is attributed to residual stress and crystalline defects. Concentration quenching of photoluminescence appears at concentrations higher than 3.6 wt % Nd. The use of (Ca,Sr)F2 for lattice matching to GaAs leads to a significant inhomogeneous broadening of Nd3+ emissions due to disorder in the cationic sublattice.
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