Abstract
IV–VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4–6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1− x Eu x Te as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1− x Eu x Te layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1− x Eu x Te ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.
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