Abstract
The growth of InP layers on GaAs substrates by molecular beam epitaxy (MBE) using gallium phosphide (GaP) as a phosphorus source was investigated. The surface reconstruction during the growth was monitored by reflection high energy electron diffraction (RHEED), the high-quality InP layers on GaAs substrates with specular surface morphology could be obtained. The effects of growth temperatures and V/III ratios on the properties of InP epi-layers were studied. The undoped layers showed n-type conduction behavior with a background carrier concentration of 4×10 16–9.5×10 18 cm −3 and mobility of 237–1761 cm 2 V −1 s −1, both at room temperature, as measured by van der Pauw method. Our results showed a strong dependence of growth quality on growth conditions such as growth temperatures and P 2/In flux ratios.
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