Abstract
InAs/GaSb superlattices are leading candidates for next generation long-wave infrared and very-long-wave infrared photodetectors. These heterostructures are expected to hold important advantages over existing materials systems, primarily bulk HgCdTe alloys. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here, we report on the molecular beam epitaxy growth and characterization of an 11 μm cutoff wavelength InAs/GaSb superlattice detector with a state-of-the-art single-pass, internal quantum efficiency of 36%. The shutter sequencing used to form the GaSb-on-InAs and InAs-on-GaSb superlattice heterojunctions is described in detail, and the latter specifically identified as a source of morphological defects in these devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
