Abstract
Epitaxial Mg3N2 films with a (100) orientation have been grown by plasma-assisted molecular beam epitaxy on single crystal MgO substrates. The growth was monitored in situ by both reflection high-energy electron diffraction and optical reflectivity. The growth rate was determined from the optical reflectivity during growth. The index of refraction of Mg3N2 was measured by spectroscopic ellipsometry and found to be in good agreement with the in situ reflectivity. The optical bandgap was found to be ∼2.5 eV from transmission measurements.
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