Abstract
We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50Å and 40Å were compared. A 2–8μm band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77K. The specific peak detectivity D∗ be 0.8×109Jones for one of the detectors.
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