Abstract
(Al,Ga,In)P is grown by molecular beam epitaxy using gallium phosphide (GaP) as a source of phosphorus. Photoluminescence from the phosphide material is compared to material using phosphine as the phosphorus source. High quality, disordered (Al,Ga,In)P can be grown using GaP, but additional impurities are observed in phosphide material grown by the GaP cell as compared to gas source material.
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