Abstract
AbstractGaN nanorods field emission arrays (FEAs) were fabricated on patterned silicon‐on‐insulator substrates with 10×10 μm2 and 1×1 μm2 periodic‐windows by molecular beam epitaxy. Their morphologies and field emission characteristics were investigated. FEAs fabricated on the 1×1 μm2 periodic‐window substrates exhibited lower threshold electric field of 2.6 V/μm, higher field emission current density of 10–3 A/cm2 and higher field enhancement factor of 1685 than those for the FEAs fabricated on the 10×10 μm2 periodic‐window substrates in spite of the reduced active areas. The improved field emission characteristics for the FEAs with smaller area periodic‐window are considered to be due to the edge effect at the patterned area. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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