Abstract
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.
Highlights
Dilute bismuth alloys grown on GaAs attract more and more attention because of their peculiar electronic properties
Our molecular beam epitaxy (MBE) system is designed to grow in the RIBER “optimal cell/sample oven” geometry which leads to high thickness uniformity on 2-inch samples even though the 32P Riber MBE system is not normally designed to get high uniformity on these large surface areas
It is worth to recall that we opened bismuth with Ga and As for a longer duration compared to the one which should be applied for growth of a 7nm quantum wells (QWs)
Summary
Dilute bismuth alloys grown on GaAs attract more and more attention because of their peculiar electronic properties. We present the structural and optical properties of a GaAsBi/GaAs QW grown by molecular beam epitaxy (MBE) and discuss their change after rapid thermal annealing (RTA). They were grown after careful calibration of the growth conditions, the GaAs growth rate, i.e. the V/III ratio, the substrate temperature and the Bi content, on thick GaAsBi layers.
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