Abstract
Low-temperature molecular beam epitaxy has enabled synthesis of magnetic III–V semiconductors that can be epitaxially integrated into nonmagnetic III–V heterostructures. Carrier-induced ferromagnetism in these magnetic III–Vs has allowed us to explore spin-dependent phenomena previously not accessible in semiconductors. I review preparation and properties of ferromagnetic III–Vs together with isothermal and reversible electric field control of ferromagnetism.
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