Abstract
quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used on a GaAs substrate, electron mobilities of at 300 K and at 20 K were routinely achieved for undoped structures. These excellent transport properties were utilized in a sensitive magnetoresistive sensor.
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