Abstract
The heteroepitaxial growth of GaAs on Si substrates was studied by RHEED, X-ray diffraction, and stress gauge measurements. The conditions for the pseudomorphic growth of GaAs monolayers on Si was determined. The monolayer growth technique was used for the two-step growth of thick GaAs layers on Si substrates. Stress-released 2 µm thick GaAs films were obtained at a growth temperature of about 420°C.
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