Abstract
We have demonstrated the selective area growth of self-assembled InAs quantum dots (QDs) in the desired regions by using a template composed of InAs QD arrays. These InAs QDs were fabricated by the use of a specially designed atomic force microscope cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional arrays of ordered In nano-dots were fabricated in the selected square regions on a GaAs substrate and directly converted to InAs QD arrays by subsequent annealing by the irradiation of As flux. By using the converted QD arrays as strain templates, self-organized InAs QDs were formed in the selected square regions. These InAs QD arrays were used for the further stacking of QDs, and photoluminescence emission was confirmed from the fabricated stacked QD structure.
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