Abstract
It was experimentally observed that the presence of indium solder between the backside of GaSb substrates and the molybdenum block has a significant effect on the molecular beam epitaxial (MBE) growth of antimony compounds. X-ray diffraction and photoluminescence characterization results show that material quality was substantially improved when a custom-made substrate holder with which to avoid indium solder between GaSb substrate and molybdenum block for mounting was used. Strain compensated InGaAsSb/AlGaAsSb laser diode devices were grown by MBE. A 2.82 μm emission wavelength and a 660 A/cm2 threshold current density were obtained in the pulsed mode at room temperature.
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