Molecular Beam Epitaxial Growth of InSb and AlSb Heterostructure on InSb Substrates

Jirapat Ounpipat,Aniwat Tandaechanurat,Suwat Sopitpan,Engrhyt Rattanawongnara,Songphol Kanjanachuchai,Noppadon Nuntawong,Suwit Kiravittaya,Visittapong Yordsri,Somchai Ratanathammaphan,Zon Zon,Somsak Panyakeow,Supachok Thainoi,Chanchana Thanachayanont

doi:10.1109/iciprm.2019.8819318

Molecular Beam Epitaxial Growth of InSb and AlSb Heterostructure on InSb Substrates

Jirapat Ounpipat, Aniwat Tandaechanurat + Show 11 more

https://doi.org/10.1109/iciprm.2019.8819318

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Publication Date: May 1, 2019

Affiliation: Chulalongkorn University, National Science and Technology Development Agency, Pathumthani University, National Electronics and Computer Technology Center, Naresuan University

#Reflection High Electron Energy Diffraction #Atomic Force Microscopy Observations + Show 8 more

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Abstract

Surface morphology of epitaxial InSb and AISb layers grown on (001) InSb substrate is reported. The growth is done by molecular beam epitaxy. Attempt to realize planar crystalline InSb layer is made. Preliminary promising results are obtained with in-situ reflection high electron energy diffraction and atomic force microscopy observations.

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