Abstract
Surface morphology of epitaxial InSb and AISb layers grown on (001) InSb substrate is reported. The growth is done by molecular beam epitaxy. Attempt to realize planar crystalline InSb layer is made. Preliminary promising results are obtained with in-situ reflection high electron energy diffraction and atomic force microscopy observations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.