Abstract
The great bowing parameter of GaAsN makes this material hopeful for the fabrication of 1.3 and 1.55 μm laser diodes and detectors. However, the effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High-quality GaAsN epilayers and abrupt GaAsN/GaAs interfaces were demonstrated using this growth mode. For the first time, a GaAsN/GaAs double quantum well sample was grown with dispersive nitrogen source. Under our annealing conditions of 750°C from 10 s to 10 min, no significant evidence of nitrogen out-diffusion from the material was found. The improvement in optical quality due to annealing is attributed to the annihilation of nitrogen-related defects through atomic rearrangement of the lattice, the effect of which on the observed blueshift in the photoluminescence peak needs further investigation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
