Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

Abstract

We report results on the incorporation of Bi (n type) and Tl (p-type) impurity in PbSe and PbEuSe grown on CaF2/Si(111) by molecular beam epitaxy. Bi2Se3 and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 1019 cm−3 range and hole concentrations in the middle 1018 cm−3 range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mobilities are comparable to those for PbSe and PbEuSe grown on BaF2.