Abstract
Abstract AlSb/InAsSb heterostructures have been successfully grown on GaAs substrate by modulated molecular-beam epitaxy (MMBE). New shutter sequence has been presented and room temperature mobility of 16,170 cm 2 /V s has been achieved with our non-intentionally doped structures. With a view for optimization, we analyze variation of electron mobility induced by growth temperature and InAsSb thickness. By increasing growth temperature and thickness of InAsSb, improvement of electron mobility has been observed. With our optimized AlSb/InAsSb heterostructures, accurate control of composition in InAsSb alloy and reduced interface mixing have been confirmed by X-Ray diffraction and Raman spectroscopy measurements.
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