Abstract
We report on the molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells. Vertically aligned <i>p</i>-doped-intrinsic-<i>n</i>-doped (<i>p-i-n</i>) InN nanowires spontaneously formed on <i>n</i>-type Si(111) substrates as well as <i>n-i</i> InN nanowires spontaneously formed on <i>p</i>-Si(111) were demonstrated. With the use of an <i>in situ</i> deposited In seeding layer, such InN nanowires exhibit non-tapered morphology. InN nanowire solar cells display a rectifying ratio of larger than 1,000 under dark, which provides a strong evidence of successful <i>p</i>-doping of InN nanowires. We measured a short-circuit current density of ~ 85 mA/cm<sup>2</sup> and a power conversion efficiency of ~ 1.62% under AM 1.5G illumination at approximately 100 mW/cm<sup>2</sup>. Further improvement in the device performance is being investigated by optimizing the growth and fabrication process.
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