Abstract
The first results on the growth of Hg1−xZnxSe by molecular beam epitaxy (MBE) are presented. Growth parameters such as substrate temperature and flux ratios were varied in order to investigate their influence on the epilayer properties. The crystalline quality of Hg1−xZnxSe was shown to increasingly deteriorate, the greater the composition differs from that of either of the binary constituents, HgSe or ZnSe. Neither incorrect MBE growth conditions nor the lattice mismatch between epilayer and GaAs substrate could be shown to be responsible for the alloy degradation. Optical measurements did not show an unequivocal relationship between composition and bandgap. All the results can be explained satisfactorily by assuming a large miscibility gap in the quasi-binary alloy system HgSeZnSe as was predicted in the literature.
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