Abstract
Hg1−xCdxTe films with cut-off wavelengths ranging from 1.25 to 1.65 μm (at 300 K) in the short wave infrared band were prepared by molecular beam epitaxy. The structural perfection of the Hg1−xCdxTe films was strongly dependent on the degree of lattice matching provided by the substrate. First reports of in situ p-type doping of Hg1−xCdxTe (x≊0.7) alloys by molecular beam epitaxy is presented here. Electron and hole concentration in excess of 1×1017 cm−3 were measured in In and As doped films, respectively. Analysis of variable temperature Hall effect data assuming singly ionized impurities provided activation energies of 28.5 meV for As acceptors, and 2.95 meV for In donors.
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