Abstract
Growth of high-quality Bi2Se3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi2Se3 thin films grown on GaAs and InP substrates by use of molecular beam epitaxy. Surface topography, crystal structure, and electrical transport properties of these Bi2Se3 epitaxial films are indicative of highly c-axis oriented films with atomically sharp interfaces.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
