Abstract
Molecular beam epitaxy (MBE) has been used to grow heterojunction barriers to electrical transport in a number of configurations. Symmetric barriers of square and triangular shape and asymmetric barriers of sawtooth shape were grown by GaAs and AlxGa1−xAs MBE and measured electrically. Temperature dependence of low-voltage conductivity gave conduction-band barrier height ΔEcb≊0.85 ΔEg for undoped barriers of direct-gap AlxGa1−xAs between Si-doped GaAs layers. I-V measurement gave symmetric or asymmetric characteristics as would be expected from the compositional profiles of the barriers.
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