Abstract
Systematic investigations have been performed concerning the effect of growth temperature and beam pressure ratio on the structural perfection and optical properties of molecular beam epitaxy (MBE) grown ZnSe on GaAs substrates. A surface phase diagram of ZnSe has been derived showing the different surface reconstructions as a function of these growth conditions. RHEED reflex profiling reveals more details about the surface morphology occurring in different stages of the growth process. The epitaxial layers are further characterized by means of X-ray diffraction and various optical techniques.
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