Abstract
We have successfully grown GaSe films on (001)GaAs by molecular beam epitaxy (MBE). Each unit layer of GaSe was grown toward the two directions on (001)GaAs, while the epitaxial GaSe films whose c-axis inclined toward the only one direction were obtained by using slightly misoriented (001)GaAs. Furthermore, we characterized the interface between epitaxial GaSe and misoriented (001)GaAs by transmission electron microscopy (TEM), and it was found that the GaSe layers were grown along the 111 plane in the intermediate region of 0.7 nm from the interface and that the obtained film was arranged in γ-type.
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